Fabrication of solar cells using Ge–Sn–S thin film prepared by co-evaporation
نویسندگان
چکیده
Abstract In this study, we produced thin-film solar cells using co-evaporated Ge–Sn–S thin film as the light-absorbing layer. The films were prepared at different concentrations of Ge and substrate temperatures. We characterized compared their physical properties with those an SnS fabricated only Sn S. x 1− S ( = 0.27) cell exhibited best performance, short circuit current density J sc 0.66 mA cm −2 , curve factor FF 0.324, power conversion efficiency PCE 0.036%, open voltage V oc 0.169 V. band gap estimated by extrapolating absorption edge external quantum was 1.57 eV, which is larger than that film. This suggests (in SnS) partially replaced to form a solid solution, thus widening gap.
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2023
ISSN: ['0021-4922', '1347-4065']
DOI: https://doi.org/10.35848/1347-4065/acd067